Discrete Semiconductor Products

SI4451DY-T1-E3

LTB

MOSFET P-CH 12V 10A 8SO

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Discrete Semiconductor Products

LTB

MOSFET P-CH 12V 10A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4451DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	120 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	8.25 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	800 mV

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI4451DY-T1-GE3	120 nC	8-SOIC	3.9 mm	0.154 in	12 V	P-Channel	MOSFET (Metal Oxide)	800 mV	8.25 mOhm	1.8 V 4.5 V	10 A	Surface Mount	1.5 W	8-SOIC	-55 °C	150 °C	8 V
Vishay General Semiconductor - Diodes Division SI4451DY-T1-E3	120 nC	8-SOIC	3.9 mm	0.154 in	12 V	P-Channel	MOSFET (Metal Oxide)	800 mV	8.25 mOhm	1.8 V 4.5 V	10 A	Surface Mount	1.5 W	8-SOIC	-55 °C	150 °C	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available