SI4451 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 12V 10A 8SO
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | FET Type | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power Dissipation (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 120 nC | 8-SOIC | 3.9 mm | 0.154 in | 12 V | P-Channel | MOSFET (Metal Oxide) | 800 mV | 8.25 mOhm | 1.8 V 4.5 V | 10 A | Surface Mount | 1.5 W | 8-SOIC | -55 °C | 150 °C | 8 V |
Vishay General Semiconductor - Diodes Division | 120 nC | 8-SOIC | 3.9 mm | 0.154 in | 12 V | P-Channel | MOSFET (Metal Oxide) | 800 mV | 8.25 mOhm | 1.8 V 4.5 V | 10 A | Surface Mount | 1.5 W | 8-SOIC | -55 °C | 150 °C | 8 V |