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STMICROELECTRONICS STGP20V60DF
Discrete Semiconductor Products

STGP20V60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 20 A VERY HIGH SPEED

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STMICROELECTRONICS STGP20V60DF
Discrete Semiconductor Products

STGP20V60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 20 A VERY HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP20V60DF
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)80 A
Gate Charge116 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]167 W
Reverse Recovery Time (trr)40 ns
Supplier Device PackageTO-220
Switching Energy200 µJ, 130 µJ
Td (on/off) @ 25°C [Max]149 ns
Td (on/off) @ 25°C [Min]38 ns
Test Condition400 V, 20 A, 15 V
Vce(on) (Max) @ Vge, Ic [Max]2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1000$ 2.65
NewarkEach 1$ 4.17
10$ 2.59
100$ 2.42
500$ 1.99
1000$ 1.86
3000$ 1.81

Description

General part information

STGP20V60DF Series

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.