Discrete Semiconductor Products

IRFD9220PBF

LTB

MOSFET P-CH 200V 560MA 4DIP

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Discrete Semiconductor Products

LTB

MOSFET P-CH 200V 560MA 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD9220PBF

Current - Continuous Drain (Id) @ 25°C	560 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRFD9220	10 V	-55 °C	150 °C	Through Hole	P-Channel	MOSFET (Metal Oxide)	200 V	1 W	4-DIP (0.300" 7.62mm)	20 V	1.5 Ohm	4 V	340 pF	560 mA
Vishay General Semiconductor - Diodes Division IRFD9220PBF	10 V	-55 °C	150 °C	Through Hole	P-Channel	MOSFET (Metal Oxide)	200 V	1 W	4-DIP (0.300" 7.62mm)	20 V	1.5 Ohm	4 V	340 pF	560 mA

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General part information

P-Channel 200 V 560mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources