IRFD9220 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 200V 560MA 4DIP
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | -55 °C | 150 °C | Through Hole | P-Channel | MOSFET (Metal Oxide) | 200 V | 1 W | 4-DIP (0.300" 7.62mm) | 20 V | 1.5 Ohm | 4 V | 340 pF | 560 mA |
Vishay General Semiconductor - Diodes Division | 10 V | -55 °C | 150 °C | Through Hole | P-Channel | MOSFET (Metal Oxide) | 200 V | 1 W | 4-DIP (0.300" 7.62mm) | 20 V | 1.5 Ohm | 4 V | 340 pF | 560 mA |