Discrete Semiconductor Products

GA05JT03-46

Obsolete

TRANS SJT 300V 9A TO46

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Discrete Semiconductor Products

Obsolete

TRANS SJT 300V 9A TO46

Technical Specifications

Parameters and characteristics for this part

Specification	GA05JT03-46

Current - Continuous Drain (Id) @ 25°C	9 A
Current Drain (Id) - Max [Max]	5.8 A
Drain to Source Voltage (Vdss)	300 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	527 pF
Mounting Type	Through Hole
Operating Temperature	210 °C
Operating Temperature [Max]	225 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-46-3, TO-46-3 Metal Can, TO-206AB
Power - Max [Max]	20 W
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	240 mOhm
Resistance - RDS(On)	240 mOhms
Supplier Device Package	TO-46
Technology	SiC (Silicon Carbide Junction Transistor)

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current Drain (Id) - Max [Max]	Resistance - RDS(On)	Drain to Source Voltage (Vdss)	Mounting Type	Power - Max [Max]	Supplier Device Package	Operating Temperature
GeneSiC Semiconductor GA05JT03-46	20 W	240 mOhm	TO-206AB TO-46-3 TO-46-3 Metal Can	9 A	-55 ░C	225 °C	SiC (Silicon Carbide Junction Transistor)	N-Channel	527 pF	5.8 A	240 mOhms	300 V	Through Hole	20 W	TO-46	210 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 48.48

General part information

300 V 9A (Tc) 20W (Tc) Through Hole TO-46

Technical documentation and resources