GA05JT03 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
TRANS SJT 300V 9A TO46
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current Drain (Id) - Max [Max] | Resistance - RDS(On) | Drain to Source Voltage (Vdss) | Mounting Type | Power - Max [Max] | Supplier Device Package | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 20 W | 240 mOhm | TO-206AB TO-46-3 TO-46-3 Metal Can | 9 A | -55 ░C | 225 °C | SiC (Silicon Carbide Junction Transistor) | N-Channel | 527 pF | 5.8 A | 240 mOhms | 300 V | Through Hole | 20 W | TO-46 | 210 °C |