FDMS8025AS

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ON Semiconductor

MOSFET N-CH

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Discrete Semiconductor Products

FDMS8025AS

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ON Semiconductor

MOSFET N-CH

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Technical Specifications

Parameters and characteristics for this part

Specification	FDMS8025AS

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FDMS8025S Series

N-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 49A, 2.8mΩ

Part	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMS8025S	8-PQFN (5x6)	MOSFET (Metal Oxide)	30 V	8-PowerTDFN	3000 pF	N-Channel	20 V	24 A 49 A	2.5 W 50 W	3 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V
ON Semiconductor FDMS8025S	8-PQFN (5x6)	MOSFET (Metal Oxide)	30 V	8-PowerTDFN	3000 pF	N-Channel	20 V	24 A 49 A	2.5 W 50 W	3 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V
ON Semiconductor FDMS8025AS

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	650	$ 0.46

Description

General part information

FDMS8025S Series

This part number is not recommended for new designs. Please apply NTMFS4C024NT1G as a replacement. The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

Documents

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