Discrete Semiconductor Products

SI7806ADN-T1-GE3

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MOSFET N-CH 30V 9A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 9A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7806ADN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7806ADN-T1-E3	PowerPAK® 1212-8	9 A	20 nC	PowerPAK® 1212-8	1.5 W	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	11 mOhm	30 V	N-Channel	4.5 V 10 V	3 V
Vishay General Semiconductor - Diodes Division SI7806ADN-T1-GE3	PowerPAK® 1212-8	9 A	20 nC	PowerPAK® 1212-8	1.5 W	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	11 mOhm	30 V	N-Channel	4.5 V 10 V	3 V

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General part information

N-Channel 30 V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources