SI7806 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 9A PPAK1212-8
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | 9 A | 20 nC | PowerPAK® 1212-8 | 1.5 W | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 11 mOhm | 30 V | N-Channel | 4.5 V 10 V | 3 V |
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | 9 A | 20 nC | PowerPAK® 1212-8 | 1.5 W | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 11 mOhm | 30 V | N-Channel | 4.5 V 10 V | 3 V |