Discrete Semiconductor Products

QS8J1TR

NRND

MOSFET 2P-CH 12V 4.5A TSMT8

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Discrete Semiconductor Products

NRND

MOSFET 2P-CH 12V 4.5A TSMT8

Technical Specifications

Parameters and characteristics for this part

Specification	QS8J1TR

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	2450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	TSMT8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Configuration	Technology	FET Feature	Power - Max [Max]	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Rohm Semiconductor QS8J1TR	2 P-Channel	MOSFET (Metal Oxide)	Logic Level Gate	1.5 W	Surface Mount	TSMT8	12 V	4.5 A	2450 pF	29 mOhm	150 °C	31 nC	1 V

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General part information

Mosfet Array 12V 4.5A 1.5W Surface Mount TSMT8

Technical documentation and resources