QS8J1 Series

Catalog

MOSFET 2P-CH 12V 4.5A TSMT8

Part	Configuration	Technology	FET Feature	Power - Max [Max]	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Rohm Semiconductor QS8J1TR	2 P-Channel	MOSFET (Metal Oxide)	Logic Level Gate	1.5 W	Surface Mount	TSMT8	12 V	4.5 A	2450 pF	29 mOhm	150 °C	31 nC	1 V