Discrete Semiconductor Products

PMPB85ENEAX

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60 V, SINGLE N-CHANNEL TRENCH MOSFET

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DocumentsLFPAK MOSFET thermal design guide - Part 2 Power MOSFET single-shot and repetitive avalanche ruggedness rating +16

Discrete Semiconductor Products

PMPB85ENEAX

Active

Nexperia USA Inc.

60 V, SINGLE N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

DocumentsLFPAK MOSFET thermal design guide - Part 2 Power MOSFET single-shot and repetitive avalanche ruggedness rating +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB85ENEAX

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	15.6 W, 1.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

PMPB85ENEA Series

60 V, single N-channel Trench MOSFET

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Qualification	Package / Case	Power Dissipation (Max)	Grade	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package
Nexperia USA Inc. PMPB85ENEAX	N-Channel	305 pF	20 V	AEC-Q101	6-UDFN Exposed Pad	1.6 W 15.6 W	Automotive	2.7 V	MOSFET (Metal Oxide)	60 V	3 A	4.5 V 10 V	9.2 nC	150 °C	-55 °C	95 mOhm	Surface Mount	DFN2020MD-6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	22367	$ 0.78

Description

General part information

PMPB85ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.