60 V, single N-channel Trench MOSFET
60 V, single N-channel Trench MOSFET
| Part | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Qualification | Package / Case | Power Dissipation (Max) | Grade | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | 305 pF | 20 V | AEC-Q101 | 6-UDFN Exposed Pad | 1.6 W 15.6 W | Automotive | 2.7 V | MOSFET (Metal Oxide) | 60 V | 3 A | 4.5 V 10 V | 9.2 nC | 150 °C | -55 °C | 95 mOhm | Surface Mount | DFN2020MD-6 |