Discrete Semiconductor Products

GC08MPS12-252

Obsolete

DIODE SIL CARB 1.2KV 40A TO252-2

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 40A TO252-2

Technical Specifications

Parameters and characteristics for this part

Specification	GC08MPS12-252

Capacitance @ Vr, F	545 pF
Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	7 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-252-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	8 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Current - Average Rectified (Io)	Technology	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Capacitance @ Vr, F
GeneSiC Semiconductor GC08MPS12-220	43 A	SiC (Silicon Carbide) Schottky	500 mA	Through Hole	1.8 V	8 A	1.2 kV	TO-220-2	7 µA	0 ns	175 ░C	-55 °C	TO-220-2	545 pF
GeneSiC Semiconductor GC08MPS12-252	40 A	SiC (Silicon Carbide) Schottky	500 mA	Surface Mount	1.8 V	8 A	1.2 kV	TO-252-2	7 µA	0 ns	175 ░C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	545 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.64

General part information

Diode 1200 V 40A Surface Mount TO-252-2

Technical documentation and resources