GC08MPS12 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.2KV 43A TO220-2
| Part | Current - Average Rectified (Io) | Technology | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 43 A | SiC (Silicon Carbide) Schottky | 500 mA | Through Hole | 1.8 V | 8 A | 1.2 kV | TO-220-2 | 7 µA | 0 ns | 175 ░C | -55 °C | TO-220-2 | 545 pF |
GeneSiC Semiconductor | 40 A | SiC (Silicon Carbide) Schottky | 500 mA | Surface Mount | 1.8 V | 8 A | 1.2 kV | TO-252-2 | 7 µA | 0 ns | 175 ░C | -55 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 545 pF |