Discrete Semiconductor Products

BU806

Obsolete

TRANS NPN DARL 200V 8A TO220

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Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 200V 8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	BU806

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	100 µA
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	60 W
Supplier Device Package	TO-220
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

Part	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case
STMicroelectronics BU806	60 W	1.5 V	150 °C	200 V	TO-220	Through Hole	100 µA	8 A	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN - Darlington 200 V 8 A 60 W Through Hole TO-220

Technical documentation and resources