Discrete Semiconductor Products

SI7850ADP-T1-GE3

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MOSFET N-CH 60V 10.3A/12A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 60V 10.3A/12A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI7850ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	10.3 A, 12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	3.6 W, 35.7 W
Rds On (Max) @ Id, Vgs [Max]	19.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7850DP-T1-E3	PowerPAK® SO-8	22 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	3 V	Surface Mount	20 V	-55 °C	150 °C	27 nC	60 V	6.2 A	1.8 W	N-Channel	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SI7850DP-T1-GE3	PowerPAK® SO-8	22 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	3 V	Surface Mount	20 V	-55 °C	150 °C	27 nC	60 V	6.2 A	1.8 W	N-Channel	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SI7850ADP-T1-GE3	PowerPAK® SO-8	19.5 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	2.8 V	Surface Mount	20 V	-55 °C	150 °C		60 V	10.3 A 12 A	3.6 W 35.7 W	N-Channel	PowerPAK® SO-8	790 pF	17 nC

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General part information

N-Channel 60 V 10.3A (Ta), 12A (Tc) 3.6W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources