SI7850 Series

Catalog

MOSFET N-CH 60V 6.2A PPAK SO-8

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7850DP-T1-E3	PowerPAK® SO-8	22 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	3 V	Surface Mount	20 V	-55 °C	150 °C	27 nC	60 V	6.2 A	1.8 W	N-Channel	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SI7850DP-T1-GE3	PowerPAK® SO-8	22 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	3 V	Surface Mount	20 V	-55 °C	150 °C	27 nC	60 V	6.2 A	1.8 W	N-Channel	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SI7850ADP-T1-GE3	PowerPAK® SO-8	19.5 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	2.8 V	Surface Mount	20 V	-55 °C	150 °C		60 V	10.3 A 12 A	3.6 W 35.7 W	N-Channel	PowerPAK® SO-8	790 pF	17 nC