Discrete Semiconductor Products

STGW80H65FB

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IGBT TRENCH FS 650V 120A TO-247

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Discrete Semiconductor Products

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IGBT TRENCH FS 650V 120A TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	STGW80H65FB

Current - Collector (Ic) (Max) [Max]	120 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	414 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	469 W
Supplier Device Package	TO-247-3
Switching Energy	1.5 mJ, 2.1 mJ
Td (on/off) @ 25°C [Max]	280 ns
Td (on/off) @ 25°C [Min]	84 ns
Test Condition	400 V, 80 A, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Supplier Device Package	Mounting Type	IGBT Type	Power - Max [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Package / Case	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Test Condition	Switching Energy	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]
STMicroelectronics STGW80V60F	TO-247-3	Through Hole	Trench Field Stop	469 W	240 A	120 A	TO-247-3	220 ns	60 ns	175 °C	-55 °C	448 nC	600 V	2.3 V	10 Ohm 15 V 80 A 400 V	1 mJ 1.8 mJ
STMicroelectronics STGW80H65FB	TO-247-3	Through Hole	Trench Field Stop	469 W	240 A	120 A	TO-247-3			175 °C	-55 °C	414 nC	650 V	2 V	10 Ohm 15 V 80 A 400 V	1.5 mJ 2.1 mJ	280 ns	84 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-247-3

Technical documentation and resources