Discrete Semiconductor Products

RDN100N20

Obsolete

MOSFET N-CH 200V 10A TO220FN

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 10A TO220FN

Technical Specifications

Parameters and characteristics for this part

Specification	RDN100N20

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	543 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220FN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor RDN100N20	10 A	150 °C	MOSFET (Metal Oxide)	TO-220FN	30 V	35 W	Through Hole	N-Channel	30 nC	TO-220-3 Full Pack	200 V	10 V	360 mOhm	543 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 10A (Ta) 35W (Tc) Through Hole TO-220FN

Technical documentation and resources