RDN100 Series
Manufacturer: Rohm Semiconductor
MOSFET N-CH 200V 10A TO220FN
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Technology | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) [Max] | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 10 A | 150 °C | MOSFET (Metal Oxide) | TO-220FN | 30 V | 35 W | Through Hole | N-Channel | 30 nC | TO-220-3 Full Pack | 200 V | 10 V | 360 mOhm | 543 pF |