Discrete Semiconductor Products

SIHG80N60E-GE3

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MOSFET N-CH 600V 80A TO247AC

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Discrete Semiconductor Products

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MOSFET N-CH 600V 80A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG80N60E-GE3

Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	443 nC
Input Capacitance (Ciss) (Max) @ Vds	6900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHG80N60E-GE3	N-Channel	30 mOhm	TO-247-3	TO-247AC	Through Hole	600 V	4 V	10 V	443 nC	MOSFET (Metal Oxide)	6900 pF	30 V	-55 °C	150 °C	520 W

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General part information

N-Channel 600 V 80A (Tc) 520W (Tc) Through Hole TO-247AC

Technical documentation and resources