SIHG80 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 80A TO247AC
| Part | FET Type | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 30 mOhm | TO-247-3 | TO-247AC | Through Hole | 600 V | 4 V | 10 V | 443 nC | MOSFET (Metal Oxide) | 6900 pF | 30 V | -55 °C | 150 °C | 520 W |