Discrete Semiconductor Products
BSM180D12P2C101
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 204 A, 1.2 KV, MODULE, 10 PINS
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Discrete Semiconductor Products
BSM180D12P2C101
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 204 A, 1.2 KV, MODULE, 10 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSM180D12P2C101 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 204 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 23000 pF |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 1130 W |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1 | $ 446.80 | |
Description
General part information
BSM180D12P2C101 Series
Half bridge module consisting of ROHM SiC-DMOSFETs.
Documents
Technical documentation and resources