1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module
1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module
1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Configuration | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 23000 pF | Silicon Carbide (SiC) | Module | Module | 4 V | 1.2 kV | 1200 V | -40 °C | 150 °C | 204 A | 2 N-Channel | 1130 W |