MMIX1T132N50P3
ActiveDISC MSFT SMPD PKG-HIPERFET&MSFT SMPD-B
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MMIX1T132N50P3
ActiveDISC MSFT SMPD PKG-HIPERFET&MSFT SMPD-B
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Technical Specifications
Parameters and characteristics for this part
| Specification | MMIX1T132N50P3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 63 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 267 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 18600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 24-PowerSMD, 22 Leads |
| Power Dissipation (Max) | 520 W |
| Rds On (Max) @ Id, Vgs | 43 mOhm |
| Supplier Device Package | Polar3™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 52.70 | 1m+ |
Description
General part information
MMIX1T132N50P3 Series
Weighing only 8g, the SMPD package is much lighter (typically by 50%) than comparable conventional power modules, thereby enabling lower weight power systems. Due to its compact and ultra-low profile package, it is possible to use the same heat sink for multiple devices, saving PCB space. An added benefit of being smaller and lighter is that it provides better protection against vibrations and g-forces, especially if used in portable appliances, increasing the life expectancy and reliability of these devices. Configurations: Buck Boost Full-bridge Half-bridge Phase leg Single
Documents
Technical documentation and resources