Discrete Semiconductor Products

SIR696DP-T1-GE3

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MOSFET N-CH 125V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 125V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR696DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	125 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	11.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIR696DP-T1-GE3	N-Channel	125 V	Surface Mount	104 W	1410 pF	PowerPAK® SO-8	60 A	11.5 mOhm	MOSFET (Metal Oxide)	PowerPAK® SO-8	-55 °C	150 °C	10 V	7.5 V	20 V	4.5 V	38 nC

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General part information

N-Channel 125 V 60A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources