SIR696 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 125V 60A PPAK SO-8
| Part | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 125 V | Surface Mount | 104 W | 1410 pF | PowerPAK® SO-8 | 60 A | 11.5 mOhm | MOSFET (Metal Oxide) | PowerPAK® SO-8 | -55 °C | 150 °C | 10 V | 7.5 V | 20 V | 4.5 V | 38 nC |