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STS2DNF30L
Discrete Semiconductor Products

STS2DNF30L

NRND
STMicroelectronics

DUAL MOSFET, DUAL N CHANNEL, 3 A, 30 V, 0.09 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES

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STS2DNF30L
Discrete Semiconductor Products

STS2DNF30L

NRND
STMicroelectronics

DUAL MOSFET, DUAL N CHANNEL, 3 A, 30 V, 0.09 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTS2DNF30L
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]4.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]121 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Power - Max [Max]2 W
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1254$ 1.01
NewarkEach (Supplied on Cut Tape) 1$ 0.99
10$ 0.76
25$ 0.69
50$ 0.63
100$ 0.56
250$ 0.51
500$ 0.47
1000$ 0.45

Description

General part information

STS2DNF30L Series

This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.