Discrete Semiconductor Products
STY145N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.012 OHM TYP., 138 A MDMESH M5 POWER MOSFET IN A MAX247 PACKAGE
Discrete Semiconductor Products
STY145N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.012 OHM TYP., 138 A MDMESH M5 POWER MOSFET IN A MAX247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STY145N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 138 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 414 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 18500 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 625 W |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | MAX247™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STY145N65M5 Series
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources