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SOT669
Discrete Semiconductor Products

PHPT61003NYX

Active
Nexperia USA Inc.

100 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR

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SOT669
Discrete Semiconductor Products

PHPT61003NYX

Active
Nexperia USA Inc.

100 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT61003NYX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-100, SOT-669
Power - Max [Max]1.25 W
QualificationAEC-Q100
Supplier Device PackagePower-SO8, LFPAK56
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic330 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.50
10$ 0.43
100$ 0.30
500$ 0.23
Digi-Reel® 1$ 0.50
10$ 0.43
100$ 0.30
500$ 0.23
N/A 0$ 1.00
Tape & Reel (TR) 1500$ 0.19
3000$ 0.17
7500$ 0.16
10500$ 0.15
37500$ 0.15

Description

General part information

PHPT61003 Series

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.