
Catalog
100 V, 3 A NPN high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

100 V, 3 A NPN high power bipolar transistor
100 V, 3 A NPN high power bipolar transistor
| Part | Operating Temperature | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Frequency - Transition | Grade | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Package / Case | Qualification | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 175 °C | 100 nA | 1.25 W | 125 MHz | Automotive | Surface Mount | 100 V | 3 A | LFPAK56 Power-SO8 | 360 mV | SC-100 SOT-669 | AEC-Q100 | PNP | 150 |
Nexperia USA Inc. | 175 °C | 100 nA | 1.25 W | 140 MHz | Automotive | Surface Mount | 100 V | 3 A | LFPAK56 Power-SO8 | 330 mV | SC-100 SOT-669 | AEC-Q100 | NPN | 80 |