Discrete Semiconductor Products

SI7964DP-T1-E3

Obsolete

MOSFET 2N-CH 60V 6.1A PPAK SO8

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 60V 6.1A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7964DP-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI7964DP-T1-GE3	65 nC	MOSFET (Metal Oxide)	4.5 V	2 N-Channel (Dual)	PowerPAK® SO-8 Dual	Surface Mount	23 mOhm	1.4 W	60 V	PowerPAK® SO-8 Dual	6.1 A	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI7964DP-T1-E3	65 nC	MOSFET (Metal Oxide)	4.5 V	2 N-Channel (Dual)	PowerPAK® SO-8 Dual	Surface Mount	23 mOhm	1.4 W	60 V	PowerPAK® SO-8 Dual	6.1 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 6.1A 1.4W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources