SI7964 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 60V 6.1A PPAK SO8
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id | Configuration | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 65 nC | MOSFET (Metal Oxide) | 4.5 V | 2 N-Channel (Dual) | PowerPAK® SO-8 Dual | Surface Mount | 23 mOhm | 1.4 W | 60 V | PowerPAK® SO-8 Dual | 6.1 A | -55 °C | 150 °C |
Vishay General Semiconductor - Diodes Division | 65 nC | MOSFET (Metal Oxide) | 4.5 V | 2 N-Channel (Dual) | PowerPAK® SO-8 Dual | Surface Mount | 23 mOhm | 1.4 W | 60 V | PowerPAK® SO-8 Dual | 6.1 A | -55 °C | 150 °C |