Discrete Semiconductor Products
STGB8NC60KDT4
ActiveSTMicroelectronics
8 A, 600 V SHORT-CIRCUIT RUGGED IGBT
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Discrete Semiconductor Products
STGB8NC60KDT4
ActiveSTMicroelectronics
8 A, 600 V SHORT-CIRCUIT RUGGED IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB8NC60KDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 19 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 65 W |
| Reverse Recovery Time (trr) | 23.5 ns |
| Supplier Device Package | D2PAK |
| Switching Energy | 55 µJ, 85 µJ |
| Td (on/off) @ 25°C | 72 ns, 17 ns |
| Test Condition | 15 V, 390 V, 3 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 665 | $ 2.46 | |
Description
General part information
STGB8NC60KD Series
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.