Discrete Semiconductor Products

SI3445ADV-T1-GE3

Obsolete

MOSFET P-CH 8V 4.4A 6TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 4.4A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3445ADV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI3445DV-T1-GE3	8 V	6-TSOP	25 nC	MOSFET (Metal Oxide)	1.8 V 4.5 V	8 V	42 mOhm	SOT-23-6 Thin TSOT-23-6	P-Channel	1 V	2 W	-55 °C	150 °C	5.6 A	Surface Mount
Vishay General Semiconductor - Diodes Division SI3445ADV-T1-GE3	8 V	6-TSOP		MOSFET (Metal Oxide)	1.8 V 4.5 V	8 V	42 mOhm	SOT-23-6 Thin TSOT-23-6	P-Channel	1 V		-55 °C	150 °C	4.4 A	Surface Mount	1.1 W	19 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 4.4A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

Technical documentation and resources

No documents available