SI3445 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 8V 6TSOP
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Package / Case | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8 V | 6-TSOP | 25 nC | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 8 V | 42 mOhm | SOT-23-6 Thin TSOT-23-6 | P-Channel | 1 V | 2 W | -55 °C | 150 °C | 5.6 A | Surface Mount | ||
Vishay General Semiconductor - Diodes Division | 8 V | 6-TSOP | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 8 V | 42 mOhm | SOT-23-6 Thin TSOT-23-6 | P-Channel | 1 V | -55 °C | 150 °C | 4.4 A | Surface Mount | 1.1 W | 19 nC |