Discrete Semiconductor Products
STB4NK60Z-1
NRNDSTMicroelectronics
N-CHANNEL 600 V, 1.7 OHM TYP., 4 A SUPERMESH POWER MOSFET IN I2PAK PACKAGE
Discrete Semiconductor Products
STB4NK60Z-1
NRNDSTMicroelectronics
N-CHANNEL 600 V, 1.7 OHM TYP., 4 A SUPERMESH POWER MOSFET IN I2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB4NK60Z-1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | I2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB4NK60 Series
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources
