Discrete Semiconductor Products

RP1E090RPTR

Obsolete

MOSFET P-CH 30V 9A MPT6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 9A MPT6

Technical Specifications

Parameters and characteristics for this part

Specification	RP1E090RPTR

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	16.9 mOhm
Supplier Device Package	MPT6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor RP1E090XNTCR	6-SMD Flat Leads	Surface Mount	6.8 nC	9 A	150 °C	30 V	4 V	10 V	20 V	2.5 V	N-Channel	17 mOhm	2 W	MOSFET (Metal Oxide)	440 pF	MPT6
Rohm Semiconductor RP1E090RPTR	6-SMD Flat Leads	Surface Mount		9 A	150 °C	30 V	4 V	10 V	20 V	2.5 V	P-Channel		2 W	MOSFET (Metal Oxide)		MPT6	30 nC	16.9 mOhm	3000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.58

General part information

P-Channel 30 V 9A (Ta) 2W (Ta) Surface Mount MPT6

Technical documentation and resources

No documents available