RP1E090 Series
Manufacturer: Rohm Semiconductor
MOSFET N-CH 30V 9A MPT6
| Part | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 6-SMD Flat Leads | Surface Mount | 6.8 nC | 9 A | 150 °C | 30 V | 4 V | 10 V | 20 V | 2.5 V | N-Channel | 17 mOhm | 2 W | MOSFET (Metal Oxide) | 440 pF | MPT6 | |||
Rohm Semiconductor | 6-SMD Flat Leads | Surface Mount | 9 A | 150 °C | 30 V | 4 V | 10 V | 20 V | 2.5 V | P-Channel | 2 W | MOSFET (Metal Oxide) | MPT6 | 30 nC | 16.9 mOhm | 3000 pF |