Discrete Semiconductor Products

BDX54C

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PNP POWER DARLINGTON TRANSISTOR

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Discrete Semiconductor Products

Active

PNP POWER DARLINGTON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BDX54C

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	60 W
Supplier Device Package	TO-220
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PNP power Darlington transistor

Part	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
STMicroelectronics BDX54C	PNP - Darlington	60 W	8 A	150 °C	100 V	Through Hole	TO-220-3	500 çA	2 V	TO-220	750

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources