RJH65T46DPQ-A0#T0

LTB

Renesas Electronics Corporation

IGBT 650V 40A TO-247A BUILT-IN FRD

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DocumentsRJH65T46DPQ-A0#T0 | Datasheet

Discrete Semiconductor Products

RJH65T46DPQ-A0#T0

LTB

Renesas Electronics Corporation

IGBT 650V 40A TO-247A BUILT-IN FRD

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DocumentsRJH65T46DPQ-A0#T0 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RJH65T46DPQ-A0#T0

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	138 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power - Max [Max]	340.9 W
Supplier Device Package	TO-247A
Switching Energy	550 µJ, 450 µJ
Td (on/off) @ 25°C [Max]	170 ns
Td (on/off) @ 25°C [Min]	45 ns
Test Condition	400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

65T4x Series Series

IGBT 650V 20A TO-3PFM

Part	Vce(on) (Max) @ Vge, Ic	IGBT Type	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Test Condition	Operating Temperature	Supplier Device Package	Mounting Type	Package / Case	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]
Renesas Electronics Corporation RJH65T47DPQ-A0#T0	2.4 V	Trench	520 µJ 560 µJ	650 V	127 nC	90 A	375 W	45 ns	190 ns	10 Ohm 15 V 45 A 400 V	175 °C	TO-247A	Through Hole	TO-247-3
Renesas Electronics Corporation RJP65T43DPQ-A0#T2	2.4 V	Trench	130 µJ 170 µJ	650 V	69 nC	60 A	150 W	35 ns	105 ns	10 Ohm 15 V 20 A 400 V	175 °C	TO-247A	Through Hole	TO-247-3
Renesas Electronics Corporation RJP65T43DPM-00#T1	2.4 V	Trench	110 µJ 170 µJ	650 V	70 nC	40 A	68.8 W	30 ns	107 ns	10 Ohm 15 V 20 A 400 V	175 °C	TO-3PFM	Through Hole	TO-220-3 Full Pack
Renesas Electronics Corporation RJH65T46DPQ-A0#T0	2.4 V	Trench	450 µJ 550 µJ	650 V	138 nC	80 A	340.9 W			10 Ohm 15 V 40 A 400 V	175 °C	TO-247A	Through Hole	TO-247-3	170 ns	45 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	383	$ 14.82
Mouser	N/A	1	$ 14.82
		10	$ 12.02
		25	$ 9.26
		100	$ 7.38

Description

General part information

65T4x Series Series

The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.

Documents

Technical documentation and resources

RJH65T46DPQ-A0#T0 | Datasheet

Datasheet