Catalog
IGBT 650V 20A TO-3PFM
Description
AI
The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.
Beta
⌘K
IGBT 650V 20A TO-3PFM
IGBT 650V 20A TO-3PFM
| Part | Vce(on) (Max) @ Vge, Ic | IGBT Type | Switching Energy | Voltage - Collector Emitter Breakdown (Max) [Max] | Gate Charge | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Test Condition | Operating Temperature | Supplier Device Package | Mounting Type | Package / Case | Td (on/off) @ 25°C [Max] | Td (on/off) @ 25°C [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 2.4 V | Trench | 520 µJ 560 µJ | 650 V | 127 nC | 90 A | 375 W | 45 ns | 190 ns | 10 Ohm 15 V 45 A 400 V | 175 °C | TO-247A | Through Hole | TO-247-3 | ||
 Renesas Electronics Corporation | 2.4 V | Trench | 130 µJ 170 µJ | 650 V | 69 nC | 60 A | 150 W | 35 ns | 105 ns | 10 Ohm 15 V 20 A 400 V | 175 °C | TO-247A | Through Hole | TO-247-3 | ||
 Renesas Electronics Corporation | 2.4 V | Trench | 110 µJ 170 µJ | 650 V | 70 nC | 40 A | 68.8 W | 30 ns | 107 ns | 10 Ohm 15 V 20 A 400 V | 175 °C | TO-3PFM | Through Hole | TO-220-3 Full Pack | ||
Renesas Electronics Corporation | 2.4 V | Trench | 450 µJ 550 µJ | 650 V | 138 nC | 80 A | 340.9 W | 10 Ohm 15 V 40 A 400 V | 175 °C | TO-247A | Through Hole | TO-247-3 | 170 ns | 45 ns |