Discrete Semiconductor Products

US6J2TR

NRND

MOSFET 2P-CH 20V 1A TUMT6

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Discrete Semiconductor Products

NRND

MOSFET 2P-CH 20V 1A TUMT6

Technical Specifications

Parameters and characteristics for this part

Specification	US6J2TR

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs [Max]	390 mOhm
Supplier Device Package	TUMT6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Configuration	Power - Max [Max]	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor US6J2TR	2 P-Channel (Dual)	1 W	MOSFET (Metal Oxide)	20 V	TUMT6	2.1 nC	6-SMD Flat Leads	150 °C	390 mOhm	2 V	1 A	Surface Mount	Logic Level Gate	150 pF

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General part information

Mosfet Array 20V 1A 1W Surface Mount TUMT6

Technical documentation and resources