US6J2 Series
Manufacturer: Rohm Semiconductor
MOSFET 2P-CH 20V 1A TUMT6
| Part | Configuration | Power - Max [Max] | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Feature | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 2 P-Channel (Dual) | 1 W | MOSFET (Metal Oxide) | 20 V | TUMT6 | 2.1 nC | 6-SMD Flat Leads | 150 °C | 390 mOhm | 2 V | 1 A | Surface Mount | Logic Level Gate | 150 pF |