Specification	STP15N80K5

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	375 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STP15N80K5 Series

N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-220 package

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
STMicroelectronics STP15N80K5	800 V	5 V	32 nC	N-Channel	375 mOhm	TO-220-3	1100 pF	Through Hole	150 °C	-55 °C	30 V	MOSFET (Metal Oxide)	190 W	10 V	14 A	TO-220

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	444	$ 3.15
Newark	Each	1	$ 4.41
		10	$ 3.82
		25	$ 3.22
		50	$ 3.16
		100	$ 3.10
		250	$ 3.09
		500	$ 2.68

Description

General part information

STP15N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.