STGW20V60DF
LTBTRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 20 A VERY HIGH SPEED
STGW20V60DF
LTBTRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 20 A VERY HIGH SPEED
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW20V60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 116 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 167 W |
| Reverse Recovery Time (trr) | 40 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 200 µJ, 130 µJ |
| Td (on/off) @ 25°C [Max] | 149 ns |
| Td (on/off) @ 25°C [Min] | 38 ns |
| Test Condition | 400 V, 20 A, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW20V60DF Series
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources