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6-TSOP
Discrete Semiconductor Products

PMN30XPAX

Active
Nexperia USA Inc.

POWER MOSFET, P CHANNEL, 20 V, 5.2 A, 0.025 OHM, TSOP, SURFACE MOUNT

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6-TSOP
Discrete Semiconductor Products

PMN30XPAX

Active
Nexperia USA Inc.

POWER MOSFET, P CHANNEL, 20 V, 5.2 A, 0.025 OHM, TSOP, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN30XPAX
Current - Continuous Drain (Id) @ 25°C5.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5 V, 8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1039 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)660 mW
Power Dissipation (Max)7.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs33 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.35
100$ 0.21
500$ 0.19
1000$ 0.13
Digi-Reel® 1$ 0.45
10$ 0.35
100$ 0.21
500$ 0.19
1000$ 0.13
N/A 0$ 0.73
Tape & Reel (TR) 3000$ 0.12
6000$ 0.12
9000$ 0.10
30000$ 0.10
75000$ 0.10

Description

General part information

PMN30 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.