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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 9 nC | 20 V | N-Channel | 558 pF | 36 mOhm | Surface Mount | 1.5 V 4.5 V | 150 °C | -55 °C | SC-74 SOT-457 | 8 V | 900 mV | 4.46 W | 530 mW | 6-TSOP | MOSFET (Metal Oxide) | 4.8 A | |||||||
Nexperia USA Inc. | 17 nC | 20 V | P-Channel | 34 mOhm | Surface Mount | 150 °C | -55 °C | SC-74 SOT-457 | 1.25 V | 560 mW | 6-TSOP | MOSFET (Metal Oxide) | 5.3 A | 12 V | 6.25 W | 2.5 V | 4.5 V | 1465 pF | ||||||
 Nexperia USA Inc. | 16 nC | 20 V | P-Channel | 1039 pF | 33 mOhm | Surface Mount | 2.5 V 8 V | 175 °C | -55 °C | SC-74 SOT-457 | 1.3 V | 7.5 W | 660 mW | 6-TSOP | MOSFET (Metal Oxide) | 5.2 A | 12 V | AEC-Q101 | Automotive |